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Chemical Vapor Deposition System Tube Furnace
PECVD Introduction
PECVD system is designed to decrease the reaction temperature of traditional CVD. It installed RF induction equipment in front of traditional CVD to ionize reacting gas, so the plasma is generated. Plasma’s high activity is Reaction is accelerated due to the high activity of plasma. So, this system is called PECVD.
This model is the newest product, it synthesized the advantages of most PECVD furnace systems, and added a pre-heating zone in the front of the PECVD furnace system. Tests showed that the deposition speed is quicker, the film quality is better, holes are less, and won’t crack. AISO fully automatic intelligent control system is independently designed by our company, it is more convenient to operate and its function is more powerful.
Wide application range of PECVD furnace: metal film, ceramic film, composite film, the continuous growth of various films. Easy to increase function, can expand plasma cleaning etch and other functions.
PECVD Furnace Features
High film deposition rate: RF glow technology, greatly increasing the deposition rate of the film, the deposition rate can reach 10Å / S
High area uniformity: Advanced multi-point RF feeding technology, special gas path distribution, and heating technology, etc., make the film uniformity index reach 8%
High consistency: using the advanced design concept of the semiconductor industry, the deviation between the substrates of one deposition is less than 2%
High process stability: Highly stable equipment ensures a continuous and stable process.
Optional Spares
Vacuum system (Rotary vane vacuum pump, Diffusion pump, Molecular pump)
Atmosphere system (Float flow meter, Mass flow meter)
Quick release flange, Multi-way flange
Touching screen temperature controller
PECVD Tube Furnace Standard specification: Heating
PECVD Tube Furnace Standard specification: RF Plasma Source
PECVD Tube Furnace Standard specification:
Three precision mass flowmeters control system
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